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Rare-Earth Implanted MOS Devices for Silicon Photonics [electronic resource] : Microstructural, Electrical and Optoelectronic Properties / by Lars Rebohle, Wolfgang Skorupa.

Por: Colaborador(es): Tipo de material: TextoTextoSeries Springer Series in Materials Science ; 142 | Springer Series in Materials Science ; 142Editor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2010Descripción: XVIII, 174 p. online resourceTipo de contenido:
  • text
Tipo de medio:
  • computer
Tipo de soporte:
  • online resource
ISBN:
  • 9783642144479
Trabajos contenidos:
  • SpringerLink (Online service)
Tema(s): Formatos físicos adicionales: Sin títuloClasificación CDD:
  • 620.11295 23
  • 620.11297 23
Clasificación LoC:
  • TA1750-1750.22
Recursos en línea:
Contenidos:
Springer eBooksResumen: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.
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Silicon-Based Light Emission -- Microstructure -- Electrical Properties -- Electroluminescence Spectra -- Electroluminescence Efficiency -- Stability and Degradation -- Applications.

The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.

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