Einstein Relation in Compound Semiconductors and their Nanostructures [electronic resource] / by Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De.

Basics of the Einstein Relation -- The Einstein Relation in Bulk Specimens of Compound Semiconductors -- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization -- The Einstein Relation in Compound Semiconductors Under Crossed Fields Configuration -- The Einstein Relation in Compound Semiconductors Under Size Quantization -- The Einstein Relation in Quantum Wires of Compound Semiconductors -- The Einstein Relation in Inversion Layers of Compound Semiconductors -- The Einstein Relation in Nipi Structures of Compound Semiconductors -- The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields -- The Einstein Relation in Compound Semiconductors in the Presence of Light Waves -- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization -- Conclusion and Future Research.

This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.

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