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Transport Equations for Semiconductors [electronic resource] / by Ansgar Jȭngel.

Por: Tipo de material: TextoTextoSeries Lecture Notes in Physics ; 773 | Lecture Notes in Physics ; 773Editor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2009Descripción: online resourceTipo de contenido:
  • text
Tipo de medio:
  • computer
Tipo de soporte:
  • online resource
ISBN:
  • 9783540895268
Trabajos contenidos:
  • SpringerLink (Online service)
Tema(s): Formatos físicos adicionales: Sin títuloRecursos en línea:
Contenidos:
Springer eBooksResumen: Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.
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Basic Semiconductor Physics -- Microscopic Semi-Classical Models -- Derivation of Macroscopic Equations -- Collisionless Models -- Scattering Models -- Macroscopic Semi-Classical Models -- Drift-Diffusion Equations -- Energy-Transport Equations -- Spherical Harmonics Expansion Equations -- Diffusive Higher-Order Moment Equations -- Hydrodynamic Equations -- Microscopic Quantum Models -- The Schrȵdinger Equation -- The Wigner Equation -- Macroscopic Quantum Models -- Quantum Drift-Diffusion Equations -- Quantum Diffusive Higher-Order Moment Equations -- Quantum Hydrodynamic Equations.

Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.

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